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| ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A FEATURES * * * * * * * * * * * Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TO-200AB (E-PUK) PRODUCT SUMMARY IT(AV) 620 A TYPICAL APPLICATIONS * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 620 Ths 55 1180 Ths 50 Hz 60 Hz 50 Hz 60 Hz 25 7950 8320 316 289 400 to 1200 Range 10 to 30 - 40 to 125 UNITS A C A C A IT(RMS) ITSM I2 t VDRM/VRRM tq TJ kA2s V s C Note * tq = 10 to 20 s for 400 to 800 V devices tq = 15 to 30 s for 1000 to 1200 V devices ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 ST303C..C 08 10 12 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 50 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit 1314 1260 900 340 50 VDRM 50 40 10/0.47 1130 1040 700 230 2070 2190 1900 910 50 VDRM - 1940 1880 1590 710 6930 3440 1850 740 50 VDRM - 6270 2960 1540 560 V A/s 55 10/0.47 C /F A 55 40 10/0.47 55 40 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 620 (230) 55 (85) 1180 7950 8320 6690 Sinusoidal half wave, initial TJ = TJ maximum 7000 316 289 224 204 3160 2.16 1.44 1.48 0.57 0.56 600 1000 m V klA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time (1) maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 0.83 10 30 s UNITS A/s Vishay High Power Products Note (1) t = 10 to 20 s for 400 to 800 V devices; t = 15 to 30 s for 1000 to 1200 V devices q q BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.09 0.04 0.020 0.010 9800 (1000) 83 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style RthC-hs TO-200AB (E-PUK) Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.010 0.012 0.015 0.022 0.036 DOUBLE SIDE 0.010 0.012 0.015 0.022 0.036 RECTANGULAR CONDUCTION SINGLE SIDE 0.007 0.012 0.016 0.023 0.036 DOUBLE SIDE 0.007 0.013 0.017 0.023 0.037 TJ = TJ max. K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 130 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 120 110 100 90 80 70 60 50 40 0 50 100 150 30 ST303C..C Series (Single side cooled) RthJ-hs (DC) = 0.09 K/W 120 110 100 90 80 70 60 50 40 30 20 400 0 100 30 200 300 ST303C..C Series (Double side cooled) RthJ-hs (DC) = 0.04 K/W O O Conduction angle Conduction angle 180 60 200 90 120 250 300 350 180 60 400 90 500 120 600 700 800 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 3 - Current Ratings Characteristics 130 120 130 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 110 100 90 80 70 60 50 40 30 20 0 100 200 300 30 60 ST303C..C Series (Single side cooled) RthJ-hs (DC) = 0.09 K/W 120 110 100 90 80 70 60 50 40 30 20 30 0 200 60 400 ST303C..C Series (Double side cooled) RthJ-hs (DC) = 0.04 K/W O O Conduction period Conduction period 90 120 DC 180 DC 180 90 120 600 800 1000 1200 400 500 600 700 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Average On-State Current (A) Fig. 4 - Current Ratings Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A 2000 8000 180 120 90 60 30 RMS limit 7500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied Vishay High Power Products Maximum Average On-State Power Loss (W) 1800 1600 1400 1200 1000 800 600 400 200 0 0 Peak Half Sine Wave On-State Current (A) 7000 6500 6000 5500 5000 4500 4000 3500 3000 O Conduction angle ST303C..C Series TJ = 125 C 100 200 300 400 500 600 700 800 ST303C..C Series 0.01 0.1 1 Average On-State Current (A) Fig. 5 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Maximum Average On-State Power Loss (W) 2400 2000 1600 1200 800 400 0 0 DC 180 120 90 60 30 RMS limit O Instantaneous On-State Current (A) 2800 10 000 1000 TJ = 25 C TJ = 125 C Conduction period ST303C..C Series TJ = 125 C 200 400 600 800 1000 1200 ST303C..C Series 100 0 1 2 3 4 5 6 7 8 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics 7500 7000 At any rated load condition and with rated VRRM applied following surge Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1 ST303C..C Series Peak Half Sine Wave On-State Current (A) 6500 6000 5500 5000 4500 4000 3500 3000 1 10 ST303C..C Series ZthJ-hs - Transient Thermal Impedance (K/W) 0.1 0.01 Steady state value RthJ-hs = 0.09 K/W (Single side cooled) RthJ-hs = 0.04 K/W (Double side cooled) (DC operation) 0.01 0.1 1 10 100 0.001 0.001 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A Qrr - Maximum Reverse Recovery Charge (C) Irr - Maximum Reverse Recovery Current (A) 180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 ST303C..C Series TJ = 125 C 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 ST303C..C Series TJ = 125 C ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A dI/dt - Rate of Fall of On-State Current (A/s) Fig. 11 - Reverse Recovered Charge Characteristics dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovered Current Characteristics 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 400 500 200 100 50 Hz 200 400 500 50 Hz 100 1000 1500 1000 2000 2500 3000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM ST303C..C Series Sinusoidal pulse TC = 40 C 1000 10 000 1000 1000 1500 2000 2500 3000 Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM ST303C..C Series Sinusoidal pulse TC = 55 C 1000 10 000 tp tp 100 10 100 100 10 100 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 500 200 100 400 50 Hz Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 200 500 400 50 Hz 100 1000 1000 1000 1500 2000 1000 1500 2000 2500 3000 tp ST303C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s 1000 10 000 2500 100 10 100 100 10 3000 tp ST303C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 1000 10 000 100 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 ST303CPbF Series Inverter Grade Thyristors (PUK Version), 620 A 10 000 50 Hz 200 400 500 100 Vishay High Power Products 10 000 Peak On-State Current (A) Peak On-State Current (A) Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM Snubber circuit Rs = 10 Cs = 0.47 F VD = 80 % VDRM 400 500 200 50 Hz 100 1000 1000 1500 2000 2500 3000 1000 1000 1500 2000 2500 tp ST303C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 1000 10 000 100 10 100 100 10 3000 tp ST303C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 1000 10 000 100 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics 100 000 100 000 Pulse Basewidth (s) Peak On-State Current (A) Peak On-State Current (A) tp ST303C..C Series Rectangular pulse dI/dt = 50 A/s 20 joules per pulse 5 10 000 10 3 2 20 joules per pulse 10 000 5 1000 0.4 1 0.5 1000 1 0.5 3 2 10 100 ST303C..C Series Sinusoidal pulse tp 100 0.4 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s TJ = 125 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) (b) TJ = 25 C TJ = 40 C tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST303C..C Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94373 Revision: 25-Jul-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST303CPbF Series Vishay High Power Products Inverter Grade Thyristors (PUK Version), 620 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 30 2 - 3 3 C 4 12 5 C 6 H 7 K 8 1 9 10 P 11 Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (E-PUK) Reapplied dV/dt code (for tq test condition) tq code 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) dV/dt - tq combinations available dV/dt (V/s) 10 tq (s) 12 up to 800 V 15 20 tq (s) 20 CN CM CL CK 50 DN DM DL DK 100 EN EM EL EK 200 FN* FM FL* FK* 400 HN HM HL HK CL 15 CP DP 18 20 CK DK EK FK* HK only for 1 = Fast-on terminals CJ DJ EJ FJ* HJ 1000/1200 V 25 - DH EH FH HH 30 (gate and aux. cathode unsoldered leads) * Standard part number. 2 = Eyelet terminals All other types available only on request. (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94373 Revision: 25-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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